2SD820 NPN Transistor Specifications

The 2SD820 is an original NPN transistor that comes with a range of technical features. It is designed to handle high voltages and currents, making it a reliable choice for a variety of applications.

Key Features

• Collector-Emitter Voltage (Vceo): The transistor has a collector-emitter voltage of 600 volts, which allows it to handle high voltage levels.
• Collector Current (Ic): It can handle a collector current of up to 5.0 amperes, ensuring efficient operation under high current conditions.
• hfe: The transistor has a forward current transfer ratio (hfe) of 8-40 at 1000 milliamperes, which indicates its ability to amplify the input signal.
• Power Dissipation (Ptot): With a power dissipation of 50 watts, the 2SD820 can effectively manage the heat generated during operation.
• Transition Frequency (fT): The transistor has a transition frequency of 1 megahertz, which is the frequency at which the transistor can effectively amplify the signal.
• Type: The 2SD820 is an NPN type transistor, which means it is designed for amplifying or switching electronic signals and electrical power.